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[en] Results of studies on defects produced by high-energy ions at different regions along their path in silicon structures are presented. The studies have been carried out using measurement of capacitance-voltage characteristics and deep level transient spectroscopy. It has been shown that to interpret correctly charge carrier removal by vacancy complexes in ion-implanted silicon one has to take into account clustering of radiation induced defects. Influence of defect clusters is most essential in the region around the end of range of implanted ions. (authors)
Source
Anishchik, V.M.; Zhukova, S.I.; Azarko, I.I.; Dorozhkina, O.L. (Belarus state univ., Minsk (Belarus)); Belarus state univ., Minsk (Belarus); National academy of sciences of Belarus, Minsk (Belarus); Ministry of education of Republic of Belarus, Minsk (Belarus); State commitee for science and technologies, Minsk (Belarus); Belarus state found of fundamental researches, Minsk (Belarus); 365 p; ISBN 978-985-476-728-4; 
; Sep 2009; p. 98-100; 8. International conference 'Interaction of radiation with solids'; 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2009; 3 refs., 4 figs.
; Sep 2009; p. 98-100; 8. International conference 'Interaction of radiation with solids'; 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2009; 3 refs., 4 figs.