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[en] The results of the study of the radial distribution by the substrate plane of nonequilibrium charge carriers life time in the neutron-doped n-type (with r = 90 W cm) and p-type (r = 10 W cm) silicon subjected to He ions irradiation with the doses of 1013 - 1015 ions/cm2 are presented. We believe that the obtained results can be used for operation of technology to produce the modern solar cells. (authors)
Source
Anishchik, V.M.; Zhukova, S.I.; Azarko, I.I.; Dorozhkina, O.L. (Belarus state univ., Minsk (Belarus)); Belarus state univ., Minsk (Belarus); National academy of sciences of Belarus, Minsk (Belarus); Ministry of education of Republic of Belarus, Minsk (Belarus); State commitee for science and technologies, Minsk (Belarus); Belarus state found of fundamental researches, Minsk (Belarus); 365 p; ISBN 978-985-476-728-4; 
; Sep 2009; p. 207-208; 8. International conference 'Interaction of radiation with solids'; 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2009; 4 refs., 6 figs.
; Sep 2009; p. 207-208; 8. International conference 'Interaction of radiation with solids'; 8. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2009; 4 refs., 6 figs.