Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.016 seconds
Han, S. U.; Jeon, J. S.; Park, C. I.; Kim, B. H.
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2009
Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)2009
AbstractAbstract
[en] Lighting Emitting Diodes have been widely studied and developed for practical applications and the LED market in the world has been dramatically expended. GaN-based materials are mostly used for LED applications. However, for diverse application, we should first solved several problems in the GaN-based LEDs, thermal heating effects and low light emitting efficiency. In this project, we studied the possibility of ZnO nanomaterials as LEDs. We have developed a technique to fabricate ZnO nanorods on various substrates with a ZnO homo-buffer layer. We also systematically studied the doping of ZnO nanorods with the implantation method of protons and nitrogen ions. After the protons and N+ ions with various energy of 50-90 keV were implanted to pre-grown ZnO nanorods, the ZnO nanorods were analyzed with various techniques, XRD, EXAFS, SEM, TEM, PL, EDS, and others. Any strong impurity peak were observed in the PL spectra. This strongly suggests that the implanted ions capture the excitons
Primary Subject
Source
Apr 2009; 46 p; Also available from KAERI; 7 refs, 21 figs, 4 tabs
Record Type
Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue