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Gurevich, A.S.; Astakhov, G.V.; Suris, R.A.; Kochereshko, V.P.; Yakovlev, D.R.; Ossau, W.; Crooker, S.A.; Karczewski, G.
Los Alamos National Laboratory (United States). Funding organisation: US Department of Energy (United States)2003
Los Alamos National Laboratory (United States). Funding organisation: US Department of Energy (United States)2003
AbstractAbstract
[en] Photoluminescence spectra of modulation-doped quantum well structures based on IT--VT semiconductors (CdTe/CdMgTe and ZnSe/ZnBeMgSe) were studied in high magnetic fields it the range of 2D electron concentrations of (1 --5) x 1011 cm2. The following peculiarities were found at low magnetic fields: (i) linear increase of the photoluminescence energy with increasing magnetic fields, (ii) jumps in this dependence at integer filling-factors, (iii) periodical changing of Zeeman splitting. The observed behavior are interpreted in a frame of a model which takes into account combined exciton electron recombination processes in the presence of magnetic fields.
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1 Jan 2003; 5 p; 10. International Symposium on Nanostructures; St. Petersburg (Russian Federation); 17-21 Jun 2002; Available from http://lib-www.lanl.gov/cgi-bin/getfile?00852525.pdf; PURL: https://www.osti.gov/servlets/purl/976402-fIamEI/
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