Raman investigation of low temperature AlGaAs/GaAs(1 0 0) heterostructures

Seredin, P.V.; Glotov, A.V.; Domashevskaya, E.P.; Arsentyev, I.N.; Vinokurov, D.A.; Tarasov, I.S.

doi:10.1016/j.physb.2010.03.049

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Raman investigation of low temperature AlGaAs/GaAs(1 0 0) heterostructures

Seredin, P.V.; Glotov, A.V.; Domashevskaya, E.P.; Arsentyev, I.N.; Vinokurov, D.A.; Tarasov, I.S.2010

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AbstractAbstract

[en] Method of Raman backscattering allowed one to study the substructure of epitaxial low temperature MOCVD AlGaAs/GaAs(1 0 0) heterostructures. It is shown that experimental data received during work correlate with results of the structural researches accomplished in the previous work. The assumption that at high concentration of a carbon acceptor atoms concentrate on defects of a crystal lattice of AlGaAs solid solution with formation of carbon nanoclusters is confirmed.

Primary Subject

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY (S75)

Source

S0921-4526(10)00315-7; Available from http://dx.doi.org/10.1016/j.physb.2010.03.049; Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)

Record Type

Journal Article

Journal

Physica. B, Condensed Matter; ISSN 0921-4526;

; CODEN PHYBE3; v. 405(12); p. 2694-2696

Country of publication

Netherlands

Descriptors (DEI)

ALUMINIUM ARSENIDES, ATOMIC CLUSTERS, ATOMS, BACKSCATTERING, CARBON, CHEMICAL VAPOR DEPOSITION, CRYSTAL DEFECTS, CRYSTAL LATTICES, EPITAXY, GALLIUM ARSENIDES, NANOSTRUCTURES, SOLID SOLUTIONS

Descriptors (DEC)

ALUMINIUM COMPOUNDS, ARSENIC COMPOUNDS, ARSENIDES, CHEMICAL COATING, CRYSTAL GROWTH METHODS, CRYSTAL STRUCTURE, DEPOSITION, DISPERSIONS, ELEMENTS, GALLIUM COMPOUNDS, HOMOGENEOUS MIXTURES, MIXTURES, NONMETALS, PNICTIDES, SCATTERING, SOLUTIONS, SURFACE COATING

LanguageLanguage

English

Reference NumberReference Number

41132490

INIS VolumeINIS Volume

INIS IssueINIS Issue

External URLExternal URL

http://dx.doi.org/10.1016/j.physb.2010.03.049

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