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[en] Method of Raman backscattering allowed one to study the substructure of epitaxial low temperature MOCVD AlGaAs/GaAs(1 0 0) heterostructures. It is shown that experimental data received during work correlate with results of the structural researches accomplished in the previous work. The assumption that at high concentration of a carbon acceptor atoms concentrate on defects of a crystal lattice of AlGaAs solid solution with formation of carbon nanoclusters is confirmed.