[en] Using the Vignale-Singwi approach with the hybrid Hubbard-STLS local-field corrections suggested by Yurtsever et al. we have calculated the local-field corrections, quantum-well form factors and Coulomb drag resistivity for different values of well width. We have shown that the Coulomb drag resistivity increases with increase in well width when the separation between the wells remained unchanged. Our results also indicate that the local-field corrections and inter-layer form factors depend weakly on the well width and the dependence of Coulomb drag resistivity on the well width is determined by the intra-layer quantum-well form factor.