[en] We show that the defect data parameters related to various defect processes, e.g., formation, migration, dielectric relaxation parameters, obey a universal law. In particular, the defect entropies scale with the defect enthalpies irrespective of the process considered. A concrete example is given here for SrF₂ by considering the dielectric relaxation parameters (R₁ relaxation mechanism) for crystals doped with trivalent ions of Ce, Eu, and Gd, parameters for the anion-Frenkel formation as well as for the migration of anion vacancy and the anion interstitial motion.