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Kim, Kihong; Jung, M.-C.; Park, Ju Chul; Choi, Sang Jun; Shin, Hyun-Joon, E-mail: shj001@postech.ac.kr2010
AbstractAbstract
[en] Nitrogen-doped Ge-Bi (8.4at.%)-Te thin films, which show a rapidly decreasing sheet resistance and NaCl-type X-ray diffraction peaks above 225degC, were investigated by synchrotron-radiation-based high-resolution X-ray absorption spectroscopy (XAS) and photoelectron spectroscopy (XPS). As the as-deposited film transformed to the crystalline phase in an ultrahigh vacuum ambient, the N 1s and Bi 4f core levels chemically shifted towards higher binding energies (BEs), a lower-BE component developed at the Te 4d core level, and a higher-BE component developed at the Ge 3d core level. The nitrogen molecules, identified by the N K-edge absorption spectra, decreased in intensity and some of them were considered to have decomposed to form a N-content-increased quaternary system. (author)
Source
Available from http://dx.doi.org/10.1143/JJAP.49.072601; 18 refs., 3 figs.
Record Type
Journal Article
Journal
Japanese Journal of Applied Physics; ISSN 0021-4922;
; v. 49(7,pt.1); p. 072601.1-072601.4

Country of publication
ABSORPTION SPECTROSCOPY, AMORPHOUS STATE, ANNEALING, BINDING ENERGY, BISMUTH ALLOYS, CHALCOGENIDES, CRYSTALLIZATION, CRYSTAL-PHASE TRANSFORMATIONS, GERMANIUM ALLOYS, NITROGEN ADDITIONS, POHANG LIGHT SOURCE, SYNCHROTRON RADIATION, TELLURIUM ALLOYS, TEMPERATURE DEPENDENCE, THIN FILMS, X-RAY DIFFRACTION, X-RAY PHOTOELECTRON SPECTROSCOPY, X-RAY SPECTROSCOPY
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