[en] In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow large quantities of GeO₂ particles with diameters ranging from tens of nanometer to 500 nm on n-type (100) Si substrate free of catalyst. The particles were grown at temperature about 1000 degree sign C for 2 hrs and characterized by scanning electron microscopy (SEM), X-Ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. The photoluminescence spectrum reveals several emission peaks around 400 nm at room temperature. Raman measurement also measured at room temperature for this GeO₂ particles.