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[en] The bias and frequency dependent photocapacitance measurements were done for indium- and gallium-doped ZnSe. It was observed that the photocapacitance increased with increasing reverse bias, but the photocapacitance decreased when the signal or measuring frequency was increased. (author)
Journal
Singapore Journal of Physics; ISSN 0217-4251; 
; v. 9(1); p. 49-56
; v. 9(1); p. 49-56