[en] The metalorganic vapor phase epitaxy of semiconductor materials has been developed over the past three decades and has focused on the synthesis of semiconductors and alloys useful in the formation of optoelectronic and high speed electronic devices. These materials are currently binary semiconductors or alloys which have broad miscibility. The extension to alloy systems which are highly immiscible in bulk form requires modification to conventional growth systems preventing the nucleation and growth of multiple compositional phases. The general features of MOVPE as it relates to the growth of complex alloys is developed within the current framework of MOVPE technology.