[en] Spintronic devices based in the transport of spin polarized current, spin's torque and other related phenomena represent big promises in the scenery of the technological miniaturization of current electronic devices. Magnetic materials of great technological relevance for different areas deal with, despite some exceptions, films and multilayered structures with high complexity. Advances on these fields require the control of those structures in atomic scale, in order to be able to tailor their physical properties. The purpose of this work is the preparation of multilayered structures by sputtering, as well the study of magnetic phenomena involved in this structures. The aim is to produce a spin valve. This is a multilayer structure composed of two ferromagnetic layers, separated by a non magnetic spacer. The magnetisation of one of the ferromagnetic layers is free to rotate under the effect of small external fields, whilst the magnetisation of the other ferromagnetic layer remains fixed by means exchange coupling to a antiferromagnetic layer. The structure is tailored to allow the small applied magnetic fields to switch the magnetisation of the ferromagnetic layers from antiparallel state to a parallel state resulting in the variation of the electrical resistivity of the structure (GMR effect). Optimization of deposition conditions was required to obtain structures with exchange bias coupling, and antiferromagnetic coupling through a non magnetic spacer. The correlation between the deposition conditions and the magnetic properties of the films was studied. The work presented in this dissertation has contributed to the characterisation of both magnetic thin films, which can be used on the production of magnetic sensors, and the new sputtering system assembled in the Applied Physics Laboratory of CDTN. (author)