[en] Ion implantation is the important method for modification and control of semiconductor properties. In this paper we report about the influence of nitrogen and oxygen implantation on the attributes of ZnO and Zn_100-xCd_xO (x=0.5-0.6) films. This activity is motivated by the high importance of this semiconducting material. ZnO and its alloys with CdO and MgO are promising ones for ultraviolet, blue and green light emitting diodes and other various devices [1]. Nitrogen and oxygen are important species. Nitrogen is an acceptor impurity in ZnO, which is promising for obtaining p-type material. Vacancies of oxygen are responsible for green emission of ZnO. Nevertheless the problem of ion implantation was studied up to date incompletely. Few papers were published on nitrogen and oxygen ion implantation into ZnO, but in some details they are contradictory to one another. ZnO and ZnCdO films were deposited on c-sapphire and p-Si substrates by magnetron sputtering implanted by 150 keV N⁺ and O⁺ ions with fluence 10¹⁶ cm^-2 and then annealed at 600- 800 degree C under air ambience. Magnetron sputtering allows obtaining high quality textured films oriented along c-axis in comparison with other growth techniques, what was confirmed by X-ray diffraction measurements. Raman scattering, photoluminescence (PL) and cathodoluminescence measurements were carried out on all stages of experiment. Ion implantation reduces ultraviolet and visible PL both due to introduced defects of crystal lattice. Annealing improves the optical quality of films, enhances the ultraviolet PL and changes the structure of visible PL due to defects. The latter contain important information about the nature of the luminescence bands of different defects which form the total shape of visible PL band. The fulfilled investigations allowed making conclusions about the role of nitrogen as acceptor centres, interaction of implanted O⁺ ions with oxygen vacancies, effect of small additions of Cd isoelectric impurity on properties of implanted films, input of implanted ions to the structure of visible PL.