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[en] Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 1013 ion/cm2 - 1016 ion/cm2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 oC - 850 oC. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρs for N type was 1.30 x 108 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and annealing temperature 500 oC. While for P type, the ρs was 1.13 x 102 Ω/sq, this was achieved at ion dose 1013 ion/cm2 and energy 40 keV, and annealing temperature 500 oC. (author)
Source
Sukarsono, R.; Ganang Suradjijo (National Nuclear Energy Agency, Yogyakarta (Indonesia)) (eds.); Centre for Research and Development of Advanced Technology, National Nuclear Energy Agency, Yogyakarta (Indonesia); 265 p; ISSN 0216-3128; 
; 2002; p. 139-146; Scientific Meeting and Presentation on Basic Research in Nuclear Science and Technology; Pertemuan dan Presentasi Ilmiah Penelitian Dasar Ilmu Pengetahuan dan Teknologi Nuklir; Yogyakarta (Indonesia); 27 Jun 2002; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 4 refs.; 2 tabs.; 6 figs.
; 2002; p. 139-146; Scientific Meeting and Presentation on Basic Research in Nuclear Science and Technology; Pertemuan dan Presentasi Ilmiah Penelitian Dasar Ilmu Pengetahuan dan Teknologi Nuklir; Yogyakarta (Indonesia); 27 Jun 2002; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 4 refs.; 2 tabs.; 6 figs.