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[en] Research and development of ion implantation for fabrication of Fe-Ag thin layer was done, i.e. investigate effects of ion implantation parameters, namely the energy and ion dose, to it's resistivity. The experiment was done by varying the ion dose from 2.236 x 1016 ion/cm2 to 8.946 x 1016 ion/cm2 at ion energy of 60 keV and 90 keV. From the experiment done it was found that the optimum resistivity of Fe-Ag thin film was 0.998 Ω which was obtained at the ion energy of 60 keV and the ion dose of 6.709 x 1016 ion/cm2 . It can be concluded that the resistivity of Fe-Ag thin film can be modified by controlling ion implantation parameters. (author)
Source
Sudjatmoko; Pramudita-Anggraita; Darsono (National Nuclear Energy Agency, Yogyakarta (Indonesia)); Siregar, Masbah T. (National Institute of Sciences, Jakarta (Indonesia)); Kusworo (University of Indonesia, Jakarta (Indonesia)); Kusminarto; Karyono (University of Gajah Mada, Yogyakarta (Indonesia)); Centre for Research and Development of Advanced Technology, National Nuclear Energy Agency, Yogyakarta (Indonesia); 189 p; ISSN 1411-1349; 
; Nov 2000; p. 105-108; The Scientific Meeting and Presentation on Accelerator Technology and Its Applications; Pertemuan dan Presentasi Ilmiah Teknologi Akselerator dan Aplikasinya; Yogyakarta (Indonesia); 8 Feb 2000; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 5 refs.; 2 tabs.; 2 figs.
; Nov 2000; p. 105-108; The Scientific Meeting and Presentation on Accelerator Technology and Its Applications; Pertemuan dan Presentasi Ilmiah Teknologi Akselerator dan Aplikasinya; Yogyakarta (Indonesia); 8 Feb 2000; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 5 refs.; 2 tabs.; 2 figs.