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[en] Research on the influence of dose and energy of the boron ion to the formation of ZnO/boron P-N junction by using ion implantation technique has been carried out. The objective of this research is to study the formation of P-N junction between ZnO semiconductor and boron ion. To obtain a good P-N junction, variation of ion energy 70 keV and 100 keV as well as ion doses from 1.1 x 1017 ion/cm2 up to 4.8 x 1018 ion/cm2 had been done. While to investigate the formation of P-N junction, a measurement at backward and forward bias resistivity had been done using digital multi meter. Characteristics of voltage versus current was measured using curve tracer, while the sheet resistivity of the sample was measured using four point probe method. It was found the following best result : the smallest forward resistivity of 0.3 mega ohm, the highest backward bias resistivity was 20 mega ohm, the best forward bias voltage was 5 volt, and the 200 volt of the highest backward voltage as well as the best sheet resistivity of 110 ohm/cm2. These results were achieved by the implantation of ion boron at energy 100 keV and dose 3.6 x 1018 ion/cm2. (author)
Source
Sudjatmoko; Pramudita-Anggraita; Darsono (National Nuclear Energy Agency, Yogyakarta (Indonesia)); Siregar, Masbah T. (National Institute of Sciences, Jakarta (Indonesia)); Kusworo (University of Indonesia, Jakarta (Indonesia)); Kusminarto; Karyono (University of Gajah Mada, Yogyakarta (Indonesia)); Centre for Research and Development of Advanced Technology, National Nuclear Energy Agency, Yogyakarta (Indonesia); 189 p; ISSN 1411-1349; 
; Nov 2000; p. 132-138; The Scientific Meeting and Presentation on Accelerator Technology and Its Applications; Pertemuan dan Presentasi Ilmiah Teknologi Akselerator dan Aplikasinya; Yogyakarta (Indonesia); 8 Feb 2000; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 9 refs.; 6 figs.
; Nov 2000; p. 132-138; The Scientific Meeting and Presentation on Accelerator Technology and Its Applications; Pertemuan dan Presentasi Ilmiah Teknologi Akselerator dan Aplikasinya; Yogyakarta (Indonesia); 8 Feb 2000; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 9 refs.; 6 figs.