[en] Within the frame of the increase of the density of integrated circuits, of simplification of cleaning processes and of improvement of control of surface reactions (for a better control of the elimination of defects and contamination risks), this research thesis first gives a large overview of previous works in the fields of silicon electrochemistry in hydrofluoric environment, of silicon chemical condition after treatment by a diluted hydrofluoric acid, of metallic contamination of silicon during cleaning with a diluted hydrofluoric acid, and of theoretical models of interpretation. Then, the author reports the development of a new electrochemical cell, and the detailed study of mono-crystalline silicon in a diluted hydrofluoric environment (electrochemical investigation, modelling of charge transfer at the interface, studies by atomic force microscopy, contamination of silicon by copper)