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AbstractAbstract
[en] The dependence of sensitivity f SnO2 gas sensors on indium concentration has been studied. Undoped and indium-doped SnO2 gas sensors have been prepared by DC sputtering technique with following parameters i.e : electrode voltage of 3 kV, current 20 mA, vacuum pressure 1.8 × 10-1 torr, deposition time 60 minutes and temperature of 200℃. The effect of weight variations of indium in order of 0.0370; 0.0485 and 0.0702 grams into SnO2 thin film gas sensor for optimum result were investigated. The measurement of resistance, sensitivity and response time for various temperature for detecting of carbon monoxide (CO), Ammonia (NH3) and acetone (CH3COCH3) gas for indium doped has been done. From the analysis result shows that for indium doped 0.0702 g on the SnO2 the resistance can be decreased from 832.0 kΩ to 3.9 kΩ and the operating temperature from 200℃ to 90℃ and improving the sensitivity from 15.92% to 40.09% and a response time from 30 seconds to 10 seconds for CO. (author)
Original Title
Pengaruh Doping Indium terhadap Sensitivitas Sensor Gas dari Lapisan Tipis SnO2
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Kusminarto; Sri Juari Santoso (Gajah Mada University, Yogyakarta (Indonesia)) (eds.); Dwi Wahini Nurhayati (ed.) (Ministry of Industry and Trade, Jakarta (Indonesia)); Agus Taftazani; Sudjatmoko; Darsono; Samin; Syarip; Prajitno; Muhadi Ayub Wasitho; Sukarsono; Tjipto Sujitno; Elisabeth Supriyatni (Centre for Accelerator Technology and Material Process, National Nuclear Energy Agency, Yogyakarta (Indonesia)) (eds.); Centre for Accelerator Technology and Material Process, National Nuclear Energy Agency, Yogyakarta (Indonesia); 176 p; ISSN 0216-3128;
; Jul 2009; p. 33-39; Scientific Meeting and Presentation on Basic Research in Nuclear Science and Technology; Pertemuan dan Presentasi Ilmiah Penelitian Dasar Ilmu Pengetahuan dan Teknologi Nuklir; Yogyakarta (Indonesia); 14 Jul 2009; Also available from Center for Development of Nuclear Informatics, National Nuclear Energy Agency, Puspiptek Area, Fax. 62-21-7560923, PO BOX 4274, Jakarta (ID); 8 refs.; 1 tab.; 13 figs.

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