[en] We reported a facile route to fabricate a tin dioxide (SnO_2)-based light-emitting diode (LED) and obtain an electrically pumped band-edge ultraviolet (UV) emission. We first investigated the photoluminescence (PL) properties of the SnO_2 thin films deposited on quartz substrates annealed at various temperatures. It was found that SnO_2 nanocrystals were embedded in the SnO_2 amorphous matrix after annealing at 400 °C to form a SnO_2 nanoparticle/amorphous hybrid film; the band-edge UV emission was observed from the hybrid film due to the hybrid structure breaking the dipole-forbidden rule of bulk SnO_2. This hybrid SnO_2 film was then deposited on a p-type GaN substrate to form a SnO_2 hybrid film-based LED and a band-edge UV electroluminescence (EL) was observed. Our results suggest that this easy and effective approach may find extensive application in the field of optoelectronics, displays and solid-state lighting. (paper)