[en] CoFeB/MgO/CoFeB tri-layer thin-film stacks have been widely used in the design of STT-RAM devices as functional magnetic-tunnel-junction (MTJ) structures. The materials properties of the CoFeB and MgO layers, including composition and lattice quality, have been extensively researched from the stand point of optimizing for the best MTJ performance. On the other hand, post-growth annealing is required for the MTJ structure to acquire its functional property, i.e. its TMR performance. In this work, we have studied the various possible effects resulting from the post-growth annealing process. Specifically, we show that the post-growth annealing causes boron in the top and bottom CoFeB layers to migrate into the adjacent Ta layers as well as deterioration in lattice quality of the MgO layer. Furthermore, we evaluate other effects that could be possibly induced during the annealing process, including Ta diffusion and layer intermixing in the CoFeB/MgO/CoFeB tri-layer structure. The post-growth annealing causes little change in the Ta diffusion and the layer intermixing. These annealing effects were also evaluated with respect to variations in the MgO growth process; more specifically, an additional natural oxidation treatment during the MgO layer deposition and the insertion of a Fe layer before the MgO layer. Our results indicate that the addition of a natural oxidation process during the MgO deposition process and the insertion of a thin-layer of Fe before the MgO layer both lead to a reduction in the layer intermixing between the MgO and the CoFeB layer and to an improvement in MgO lattice quality. We also show that the post-growth annealing does not alter the beneficial effect of these MgO growth process modifications. (paper)