[en] We fabricated lanthanide ion (Ln"3"+, e.g. Dy"3"+, Er"3"+, Eu"3"+, and Gd"3"+)-doped self-assembled double-crossover (DX) DNA crystals grown on the surface of field effect transistors (FETs) containing either a Cr, Au, or Ni electrode. Here we demonstrate the metal electrode dependent FET characteristics as a function of various Ln"3"+. The drain–source current (I _d_s), controlled by the drain–source voltage (V _d_s) of Ln"3"+-doped DX DNA crystals with a Cr electrode on an FET, changed significantly under various gate voltages (V _g) due to the relative closeness of the work function of Cr to the energy band gap of Ln"3"+-DNA crystals compared to those of Au and Ni. For Ln"3"+-DNA crystals on an FET with either a Cr or Ni electrode at a fixed V _d_s, I _d_s decreased with increasing V _g ranging from  −2 to 0 V and from 0 to  +3 V in the positive and negative regions, respectively. By contrast, I _d_s for Ln"3"+-DNA crystals on an FET with Au decreased with increasing V _g in only the positive region due to the greater electronegativity of Au. Furthermore, Ln"3"+-DNA crystals on an FET exhibited behaviour sensitive to V _g due to the appreciable charge carriers generated from Ln"3"+. Finally, we address the resistivity and the mobility of Ln"3"+-DNA crystals on an FET with different metal electrodes obtained from I _d_s–V _d_s and I _d_s–V _g curves. The resistivities of Ln"3"+-DNA crystals on FETs with Cr and Au electrodes were smaller than those of pristine DNA crystals on an FET, and the mobility of Ln"3"+-DNA crystals on an FET with Cr was relatively higher than that associated with other electrodes. (paper)