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[en] In this paper, different MgO films were deposited on a GaAs substrate by atom layer deposition (ALD), which can passivate the surface state of GaAs. From XPS results, the band structure of MgO/GaAs can be indexed to type I. Based on band alignment, the excitons could not diffuse and created nonradiative centers, which were all limited and then recombined at the MgO/GaAs interface, thus the emission intensity of the 100 nm MgO film coated sample was about 3 times higher than the uncoated sample. (paper)
Journal
Materials Research Express (Online); ISSN 2053-1591; 
; v. 2(9); [7 p.]
; v. 2(9); [7 p.]