[en] Highlights: • The Be films were prepared on the water-cooled substrates and heated substrates by thermal evaporation, respectively. • The Be grains grown on Si substrates were refined than those grown on glass substrates in the experiment of water-cooled substrate due to the different thermal conductivity of substrate. • The Be films grown on water-cooled glass substrates were under pressure stress and it gradually decreased with increasing the heating temperature. • The electrical resistivity of Be films decreased with increasing the heating temperature in the experiment of water-cooled substrate due to the gradually improving crystallinity. • However, the electrical resistivity of Be films increased with increasing the substrate temperature in the experiment of heated substrate due to gradual oxidization at high temperature. - Abstract: The Be films were prepared on the water-cooled substrates and heated substrates by thermal evaporation, respectively. The experiment of water-cooled substrate showed the grains in Be films grown on Si substrates were refined than those grown on glass substrates and the surface roughness of Be films grown on Si substrates was also improved. The electrical performance test suggested that the electrical resistivity of Be films grown on water-cooled substrates decreased with increasing the heating temperature and was bigger than that grown on non-water-cooled substrates. For the experiment of heated substrate, the Be films appeared the loose flocculent structure, and the surface roughness firstly increased from 8 nm to 45–65 nm in the range of 150–300 °C and then decreased to 10 nm at 400 °C. Meanwhile, its electrical resistivity sharply increased from 0.6 Ω/□ to 206.6 Ω/□ due to the gradual oxidization at high temperature, especially 400 °C.