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[en] Graphical abstract: - Highlights: • DOUS of the ultrathin films of the aziridinylphenylpyrrol substituted C_6_0 was determined by using the transmission of the low-energy electrons technique and by the DFT calculations. • The introduction of the APP substituent to C_6_0 molecule was accompanied by the modifications of DOUS in the energy range from 2 eV to 9 eV above E_F. • The major DOUS bands were assigned π* and σ* - type character using the spatial distribution of the relevant orbitals obtained from the DFT calculation results. - Abstract: The ultrathin films of aziridinylphenylpyrrol-C_6_0 (APP-C_6_0) and of the unsubstituted C_6_0 thermally deposited in UHV on an oxidized silicon substrate (SiO_2)n-Si were studied experimentally using the very low energy electron diffraction (VLEED) method and the total current spectroscopy (TCS) measurement scheme. The density of the unoccupied electronic states (DOUS) located 2-20 eV above the Fermi level (E_F) of the films under study was determined using the TCS results and using the results of the density functional theory (DFT) calculations of the vacant electronic orbitals of the APP-C_6_0 and C_6_0 molecules. The DOUS peak structure obtained on the basis of the calculation results corresponds well to the structure of the major DOUS bands obtained from the TCS experiment. The comparison of the DOUS spectra of the APP-C_6_0 and C_6_0 films under study showed that the introduction of the APP substituent to the C_6_0 molecule was accompanied by the pronounced changes of the π* DOUS bands in the energy range from 2 eV to 5 eV above E_F and of the DOUS band composed from both π* and σ* - type orbitals in the energy range from 5 eV to 9 eV above E_F. The formation of the low-lying σ* DOUS band in the APP-C_6_0 film in the energy range from 8 eV to 13 eV above E_F can be explained by the superposition of the relevant DOUS maxima from the C_6_0 film and from the APP fragment.