An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Edmondson, P.D.; Abrams, K.J.; Hinks, J.A.; Greaves, G.; Pawley, C.J.; Hanif, I.; Donnelly, S.E.

doi:10.1016/j.scriptamat.2015.11.010

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An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

Edmondson, P.D.; Abrams, K.J.; Hinks, J.A.; Greaves, G.; Pawley, C.J.; Hanif, I.; Donnelly, S.E.2016

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AbstractAbstract

[en] Transmission electron microscopy with in situ ion irradiation has been used to examine the ion-beam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

Primary Subject

MATERIALS SCIENCE (S36)

Source

S1359-6462(15)30050-6; Available from http://dx.doi.org/10.1016/j.scriptamat.2015.11.010; Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)

Record Type

Journal Article

Journal

Scripta Materialia; ISSN 1359-6462;

; CODEN SCMAF7; v. 113; p. 190-193

Country of publication

United Kingdom

Descriptors (DEI)

AMORPHOUS STATE, ELECTRON DIFFRACTION, HELIUM IONS, ION BEAMS, IRRADIATION, PHASE TRANSFORMATIONS, PHYSICAL RADIATION EFFECTS, SILICON, TEMPERATURE RANGE 0273-0400 K, TRANSMISSION ELECTRON MICROSCOPY, XENON IONS

Descriptors (DEC)

BEAMS, CHARGED PARTICLES, COHERENT SCATTERING, DIFFRACTION, ELECTRON MICROSCOPY, ELEMENTS, IONS, MICROSCOPY, RADIATION EFFECTS, SCATTERING, SEMIMETALS, TEMPERATURE RANGE

LanguageLanguage

English

Reference NumberReference Number

48012701

INIS VolumeINIS Volume

INIS IssueINIS Issue

External URLExternal URL

http://dx.doi.org/10.1016/j.scriptamat.2015.11.010

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