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[en] Effect of Si ion implantation on structural and morphological features of graphite-like carbon nitride (g-C_3N_4) was investigated. g-C_3N_4 was prepared by using a simple atmospheric thermal decomposition process. The g-C_3N_4 pellets were irradiated with a Si ion beam of energy 200 keV with different fluencies. Structural, morphological and elemental, and phase analysis of the implanted samples in comparison with the pristine samples was carried out by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques, respectively. The observations revealed that Si ion implantation results in a negligible change in the crystallite size and alteration of the network-like to the sheet-like morphology of g-C_3N_4 and Si ions in the g-C_3N_4 network.