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[en] Al/SiO_2/n-Si structures irradiated with 3.5 MeV-electrons are studied. Irradiation fluence was varied in the range from 10"1"3 to 5×10"1"5 cm"-"2. It is shown that the irradiation of the Al/SiO_2/n-Si structures with electrons leads to the transformation of the behavior of dependences of the loss tangent tanδ on the bias voltage U. In the range of U, which corresponds to the depletion regime and weak inversion, the irradiation of the structures with electrons with fluences of 10"1"3-5*10"1"4 cm"-"2 causes increase in tanδ more than an order of magnitude due to the losses caused by the recharging of surface states. For the structures irradiated with electrons with fluences ≈5*10"1"5 cm"-"2, it is characteristic the in-crease in tanδ in the whole range of examined U (from -40 to +40 V) due to the increase in the currents that pass through dielectric. (authors)
Source
Anishchik, V.M. (ed.); Uglov, V.V.; Baran, L.V.; Azarko, I.I. (Belarusian state univ., Minsk (Belarus)); Belarusian state univ., Minsk (Belarus); Ministry of education of Republic of Belarus, Minsk (Belarus); National academy of sciences of Belarus, Minsk (Belarus); Belarus state found of fundamental researches, Minsk (Belarus); 440 p; ISBN 978-985-553-304-8; 
; Sep 2015; p. 136-138; 11. International conference 'Interaction of radiation with solids'; 11. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2015; 6 refs., 4 figs.
; Sep 2015; p. 136-138; 11. International conference 'Interaction of radiation with solids'; 11. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 23-25 Sep 2015; 6 refs., 4 figs.