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[en] Highlights: • MoSe2 layers are obtained by thermal treatment of molybdenum in selenium vapor. • Spectroscopic ellipsometry is applied to the obtained layers and MoSe2 target. • Electronic band structure of MoSe2 is calculated and dielectric function is derived. • Calculated and ellipsometry-based data on dielectric function agree fairly well. • Excitonic transitions are assumed to form the dielectric function at around 1 eV. - Abstract: Submicron MoSe2 layers were prepared by thermal treatment of thick Mo layers on glass substrate in saturated selenium vapor. Spectroscopic ellipsometry was then applied to the obtained MoSe2/Mo/Glass structures and MoSe2 target sample at room temperature. Dielectric function for both the MoSe2 layer and MoSe2 target was retrieved in the spectral range 190–1700 nm by using the Kramers-Kronig consistent B-spline dispersion model. The obtained data were similar in both cases. Despite apparent red shift of the dielectric function spectra of the layer in high energy region the peculiarity at around 1 eV is manifested at the same energy for both, layer and target. Comparison of the ellipsometry-based dielectric function of the target and the one, obtained within calculated band structure of MoSe2 for room temperature lattice parameters, has shown that the former is a broadened counterpart of the latter. Above-mentioned peculiar feature is not reproduced in the calculated dielectric function and is assumed to have excitonic nature.