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[en] The conditions for obtaining epitaxial InN layers on a-plane (11-20) sapphire with a GaN buffer layer by MOCVD method are determined for the first time. Comparative studies show that InN layers on a-plane sapphire have higher structural perfection and improved photoluminescence properties compared to those grown on c-plane sapphire. Formation of indium clusters in the InN layers along with the conditions impeding their appearance is considered. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Journal
Physica Status Solidi A. Applications and Materials Science (Online); ISSN 1862-6319; 
; v. 215(11); p. 1-4
; v. 215(11); p. 1-4