[en] Resistive switching behavior in Graphene oxide (GO) is well studied, however, the various mechanisms responsible for this phenomenon are still under extensive debate. We present repeatable bipolar resistive switching in GO thin films sandwiched between two insulating polymer PVDF (Polyvinylidene Fluoride) grown on conducting indium tin oxide (ITO) covered glass substrate. The device heterostructure (Al/PVDF/GO/PVDF/ITO) showed bipolar resistance states switching between low resistance state (LRS) to high resistance state (HRS) with a large ON/OFF ratio of 10³ and resistance retention potential up to 10⁴ s. In LRS, in the low applied voltage region, ohmic conduction was the main reason for current conduction in devices; however, traps filled/assisted conduction mechanism dominates in the higher voltage region. The PVDF/GO/PVDF heterostructure shows that oxygen vacancies are responsible for the formation of current conducting filaments. The low operating voltage (<3 V) and long-term stability of resistance states make it a promising candidate for possible applications as Resistive Random Access Memory (ReRAM) elements. - Highlights: • Giant resistive switching (RS) effect in PVDF/GO/PVDF heterostructure thin films. • Large high to low resistance ratio of an order of ∼10³ and long resistance retention time. • The significant ON and OFF resistance ratio is suitable for NVRAM logic states. • Oxygen vacancies are responsible for the formation of current conducting filaments.