[en] Cupric oxide (CuO) thin films were synthesized by direct current (DC) reactive magnetron sputtering technique. This technique has proved to be a reproducible one. Ratios of Argon and oxygen gas in the plasma and the substrate temperature during deposition were found to be the key parameters for the formation of CuO polycrystalline films. Films were characterized by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical spectroscopy, photoluminescence, and Raman spectroscopy techniques. Grain sizes in these films varied between 120 and 220 nm. Films were found to be preferentially oriented in (002) direction. Predominant p-type conductivity in the CuO films was confirmed from Hall measurement. CuO/CdS p-n junction solar cell obtained with non-rationalized layer thicknesses showed an open circuit voltage (V_OC) ∼421 mV, short circuit current density (J_SC) ∼3.6 mA/cm², Fill Factor (FF) ∼0.46 and efficiency (ɳ) ∼1.2%. - Highlights: • p-type CuO films with strong (002) texture by magnetron sputtering technique. • Deposition parameters: Ar:O₂ ∼60:40; Ts∼623 K and d.c. power ∼0.6 kV at 1.2 mA/cm² • p-type conductivity in the CuO films was confirmed from Hall measurement. • PL peaks at ∼1.61 and ∼1.36 eV due to recombination of excitons and DA transitions. • CuO/CdS solar cell showed V_OC∼421 mV, J_SC ∼3.6 mA/cm² and ɳ ∼1.2%.