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[en] Effects of two deposition techniques like e-gun evaporation and RF sputtering for the SiOx films have been evaluated, and a long program/erase (P/E) endurance of >109 cycles with small pulse width of 100 ns and lower P/E current of <50 μA has been achieved for the e-gun deposited SiOx film in a simple W/SiOx/TiN structure for the first time. However, the RF sputtering deposited SiOx switching material has shown higher operation current of >200 μA. Resistive switching characteristics by using tungsten (W) and iridium (Ir) electrodes in a metal/SiOx/TiN structure have been also investigated. Memory device with amorphous SiOx film is observed by transmission electron microscope image. E-gun deposited films show more defective SiOx than the sputtering and the mixture of Si0 and Si4+ oxidation states are observed, which is confirmed by X-ray photoelectron spectroscopy. Schottky barrier height modulation is responsible for changing the high and low resistance states (0.55 eV vs, 0.46 eV) under external bias at low current of 10 μA. Similarly, the pH sensing occurs in Ir/SiOx/TiN structure due to Schottky barrier height changing at the Ir/SiOx interface. Under external bias, reduction-oxidation (redox) occurs at the SiOx/TiN interface for the W/SiOx/TiN structure and Ir/SiOx interface by changing of Si0/Si4+ oxidations states as well as Schottky barrier height is modulated owing to O2− ions migration. This switching mechanism is also understood by pH sensing. Creatinine with a low concentration of 100 nM has been detected through Ir electrode using Ir/SiOx/TiN structure for the first time, which will be useful for healthcare unit in near future. - Highlights: • Comparison of e-gun and sputtering deposited SiOx film in W/SiOx/TiN RRAM device. • More oxygen vacancy of e-gun deposited SiOx film in RRAM improves memory performance. • A long P/E endurance of >109 cycle with P/E current of <50 μA at high speed 100 ns. • Creatinine with a low concentration of 100 nM in Ir/SiOx/TiN structure is detected.