[en] This paper presents the growth, structural characterization, and measurement of magnetic properties of Co₂TiGe thin films grown by molecular beam epitaxy on insulating MgO (001) substrates and conductive lattice matched InAlAs/InGaAs/InAlAs epitaxial layers grown on n-InP (001) substrates. A GdAs diffusion barrier was used to minimize interfacial reactions during Co₂TiGe growth on InAlAs. The surface morphology, structural quality, and magnetic behavior were examined by reflection high-energy electron diffraction, scanning tunneling microscopy, X-ray diffraction, and superconducting quantum interference device magnetometry. The results reveal high quality Co₂TiGe thin films with a saturation magnetization of ~1.8 μ_B/formula unit and a Curie temperature of ~375 K. Finally, the magnetic easy axis was found to lie in the [110] direction but magnetometry also reveals that there is only a small difference in energy between the [110] and [010] magnetization directions.