[en] Experimental investigation of electron transport along a two-dimensional channel confined in an InGaN alloy of Al${}_{0.82}$In${}_{0.18}$N/AlN/In${}_{0.1}$Ga${}_{0.9}$N/GaN structure was performed at room temperature under near-equilibrium thermal-bath temperature. A soft damage was observed at a threshold electric field applied in the channel plane. The threshold current for soft damage and the supplied electric power were lower in the channels with a higher electron density. The results are interpreted in terms of plasmon-assisted heat dissipation. In agreement with ultra-fast decay of hot phonons in the vicinity of the resonance with plasmons, the electron drift velocity acquires a highest value of ∼2 × 10⁷ cm s⁻¹ at 180 kV cm⁻¹ in channels with 1 × 10¹³ cm⁻² and decreases as the electron density increases. No negative differential resistance is observed. The effective hot-phonon lifetime is estimated as ∼ 2 ps at 1.6 × 10¹³ cm⁻² at low electric fields and is found to decrease as the field increases. (paper)