[en] Full text: Atomic-scale engineering reached the level of control where single-atom devices can be reproducibly fabricated with high yield. This talk focuses on the progress of single dopant atom placement in the context of engineered quantum matter. Silicon offers a particularly interesting platform for single dopants because when isotopically purified it acts as a “semiconductor vacuum” for spins. This leads to extraordinary coherence that is used to realise donor atom based qubits. Spatially resolved tunnelling experiments reveal the spectrum and quantum state image of such qubits. These measurements grant access to the wavefunction of donors in the silicon lattice that exhibited quantum interference processes reflecting the valley degrees of freedom inherited from the silicon “semiconductor vacuum”. This interference process makes it possible to pinpoint the dopants to their exact position in the lattice that is essential in the evaluation of engineered quantum matter. Finally, a first step towards engineered quantum matter in for form of atomic chains was taken where interacting dopants were employed to simulate a two-site Hubbard Hamiltonian at low effective temperatures with single-site resolution. Quasi-particle tunnelling maps of spinresolved states with atomic resolution reveal interference processes from which the entanglement entropy and Hubbard interactions are quantified. (author)