[en] Au nanoparticle (NP)-modified Si nanomembrane (Si NM) Schottky barrier diodes (SBDs) were fabricated by using a transfer-printing method to create pedestals using only one photomask on a flexible substrate. The transfer using the pedestals afforded a yield of >95% with no significant cracks. The plasmonic Au NPs can facilitate the improvement of the incident optical absorption. The Au NP-modified Si NM SBD exhibited enhanced photoresponse characteristics with an external quantum efficiency (${\mathit{\eta <!--\; ??\; -->}}_{\mathbf{E}\mathbf{Q}\mathbf{E}})$ of 34%, a photosensitivity ($\mathit{P})$ of 27 at a voltage bias of −5 V, a light intensity of 1.2 W cm⁻², and a responsivity (${\mathit{R}}_{\mathbf{p}\mathbf{h}})$ of 0.21 A W⁻¹. Additionally, the mechanical bending characteristics of the device were observed while a compressive strain up to 0.62% was applied to the diode. The results suggest that the Au NP-modified Si NM SBD has great potential for use in multifunction devices as a strain sensor and photosensor. (paper)