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Du, Xinhua; Liang, Bo; Yao, Shiyue; Li, Weifeng; Jin, Xihai; Chen, Haohong, E-mail: liangbo@ysu.edu.cn, E-mail: liweifeng@suda.edu.cn2015
AbstractAbstract
[en] This paper reports on the radiation damage of gamma aluminum oxynitride (γ-AlON) transparent ceramic, which remarkably degrades UV–vis transparency and hence limits its applications in optoelectronic devices. The radiation-induced optical absorption of the as-sintered γ-AlON consists of at least two subbands: one is in the UV region with a peak at 270 nm and the other optical absorption band centers at 550 nm, covering the whole visible light spectrum, which makes the sample colored. Interestingly, all the radiation-induced color centers can be completely ‘bleached’ by low temperature annealing. In the thermoluminescence curve, we observed a broad luminescence in the range of 25–300 °C with the peak at 120 °C. Furthermore, the x-ray excited luminescence spectra revealed that there exist multiple emission centers in the γ-AlON. Based on this experimental fact, the radiation damage and luminescent mechanisms were studied. These optical properties of the γ-AlON are considered to be related to defect states. In the as-sintered γ-AlON, charge balancing is realized by the co-existence of and , and the predominant defect form is , which is optically inactive and no optical absorption occurs. However, isolated and can be formed by irradiation and it is these that are responsible for the radiation damage of γ-AlON transparent ceramic. In the end, the UV absorption and visible-light absorption in the irradiated sample were ascribed to VAl-related and ON-related intrinsic defects, respectively. (paper)
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Available from http://dx.doi.org/10.1088/0022-3727/48/34/345104; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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CRYSTAL DEFECTS, CRYSTAL STRUCTURE, ELECTROMAGNETIC RADIATION, ELECTRONIC EQUIPMENT, ELEMENTS, EMISSION, EQUIPMENT, HEAT TREATMENTS, IONIZING RADIATIONS, LUMINESCENCE, METALS, OPTICAL EQUIPMENT, OPTICAL PROPERTIES, PHOTON EMISSION, PHYSICAL PROPERTIES, POINT DEFECTS, RADIATIONS, SORPTION, TRANSDUCERS, VACANCIES
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