[en] Selective epitaxial graphene growth is achieved in pre-selected areas on the 4H-SiC$(000\stackrel{¯<!--\; ??\; -->}{1})$ C-face with a SiN masking method. The mask decomposes during the growth process leaving a clean, resist free, high temperature annealed graphene surface, in a one-step process. Depending on the off-stoichiometry composition of a Si_3 + xN₄ mask evaporated on SiC prior to graphitization, the number of layers on the C-face increases (Si-rich) or decreases (N-rich). Graphene grown in masked areas shows excellent quality as observed by Raman spectroscopy, atomic force microscopy and transport data. (fast track communication)