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Tavares, Mara Tatiane de Souza; Silva, Misael Pegado Oliveira da; Paskocimas, Carlos Alberto; Delmonte, Mauricio Roberto Bomio; Motta, Fabiana Villela da, E-mail: maratatianest@gmail.com
Sociedade Brasileira de Pesquisa em Materiais (SBPMat), Rio de Janeiro, RJ (Brazil); Universidade Federal da Paraíba (UFPB), João Pessoa, PB (Brazil)2014
Sociedade Brasileira de Pesquisa em Materiais (SBPMat), Rio de Janeiro, RJ (Brazil); Universidade Federal da Paraíba (UFPB), João Pessoa, PB (Brazil)2014
AbstractAbstract
[en] Full text: The indium hydroxide semiconductor with a wide band gap (Eg) estimated to be 5.15 eV is attractive due to its electronic and optical properties [1-2]. Crystalline zinc-doped indium hydroxide structures were prepared by the rapid and efficient microwave-assisted hydrothermal (MAH) method. X-ray diffraction (XRD) and UV-visible (UV-vis) spectroscopy were used to characterization the materials. The XRD shows patterns of pure In(OH)3 nanostructures and with 4% of Zn2+ . XRD was used to verify the composition and phase evolution of the samples. All diffraction peaks in XRD patterns could be indexed to the cubic lattice related to the In(OH)3 phase (PDF card No . 16-161). References: [1] S. Avivi, Y. Mastai, A. Gedanken, Chem Mater 12 (2000) 1229-1233. [2] T. Ishida, K. Kuwabara, J Ceram Soc Japan 106 (1989) 381-384. (author)
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2014; 1 p; 13. Brazilian SBPMat meeting; Joao Pessoa, PB (Brazil); 28 Sep - 2 Oct 2014; Available in abstract form only; full text entered in this record
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Miscellaneous
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Conference
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