[en] The effect of 8.2 MeV electron and the 6.5 MeV proton irradiation on the electrical characteristics of n-type Ni/4H-SiC-based Fast Neutron Detectors (FNDs) is investigated with the help of a commercial device simulator, i.e., TCAD. As a consequence of irradiation, deep-levels are generated in the band-gap of the semiconductor material. These deep-levels cause significant changes in the electrical response of the semiconductor device. The current-voltage (I–V) and capacitance-voltage (C–V) characteristics have been simulated to predict the device performance subjected to the high fluence of electron and proton. Critical device parameters such as the ideality factor, barrier height, doping concentration, series-resistance, etc., are also estimated. The carrier removal rate of 0.74 cm⁻¹ and 5.53 cm⁻¹ for electron and proton irradiation, respectively, is found in SiC-based devices which is lower compared to Si-based devices. The study evinces the radiation hardness of SiC-based devices and ensures its applicability in the harsh environment as often encountered in Nuclear Power Plants.