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Zuluaga, Sebastian; Pantelides, Sokrates T; Lin, Junhao; Suenaga, Kazu, E-mail: pantelides@Vanderbilt.edu2018
AbstractAbstract
[en] While the exfoliation of almost all layered materials results in a monolayer with the same atomic geometry as its bulk counterpart, the exfoliation of PdSe2 results in a monolayer with a different atomic geometry and a new stoichiometry, Pd2Se3, which is a fusion of two PdSe2 monolayers mediated by Se emission. Here we first report first-principles calculations of lateral junctions between a PdSe2 bilayer and a Pd2Se3 monolayer. We find that, while several distinct junction geometries are possible, they all exhibit empty interface states below the conduction band. As a result, light n-type doping of either or both sides, e.g. by halogen atoms replacing Se atoms, leads to a remotely-doped interface, i.e. a 1D conducting nanowire that runs along the junction, in between the two semiconductors. We have fabricated such junctions inside a scanning transmission electron microscope (STEM), but doping and transport measurements are not currently practical. (paper)
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Source
Available from http://dx.doi.org/10.1088/2053-1583/aac34c; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
2D Materials; ISSN 2053-1583;
; v. 5(3); [7 p.]

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