[en] Highlights: • Relationships between the microstructure of the AZO-HQ films and their electrical parameters under bending were found. • Observation and description of the piezoresistive effect as a function of the organic content in the AZO-HQ films. • The film crack resistance was attributed especially to the long-shape grains oriented in the deformation direction. • The piezoresistivity was associated mostly with stress in the ZnO a-axis direction. • AZO-HQ films with 2 vol.% of the organic content had lowest critical bend radius and the highest critical strain. ZnO:Al-hydroquinone (AZO-HQ) films were grown on poly(ethylene terephthalate) (PET) substrates by atomic and molecular layer deposition (ALD/MLD). Organic contents in the films varied from 0 to ≈ 4 vol%. Structural and electrical investigations of the films were carried out. Electrical measurements were performed under film bending. The piezoresistive effect in the films with different organic contents was observed and described. Critical bend radius, critical strain, and piezoresistive coefficient values were related to the film microstructure. The piezoresistivity was found to be enhanced for the deformations of ZnO crystallites along the a-axis whereas higher critical strain was influenced by long crystallites oriented in the deformation direction. AZO-HQ films having 2 vol% of the organic content are characterized by the lowest critical bend radius and the highest critical strain among the films under study.