[en] In the work, the possibility of formation of GaN and AlN nanofilms at relatively low temperatures (300 - 700 ℃) by magnetron sputtering of gallium and aluminum in the nitrogen atmosphere, under ultraviolet light, followed by a pulsed photon annealing is reported. It is shown that the pulse photon annealing forms polycrystalline inclusions in the initially amorphous gallium nitride and aluminum nitride. The doping material is introduced into nitride on the substrate in the process of formation under ultraviolet (UV) irradiation. After formation of the nitride and iron layers, a pulse photon treatment from the substrate side is performed to improve crystallization and mineral activation, at the same time Fe-doping of gallium nitride provides p-type conductivity. (author)