[en] For the sake of evaluating the feasibility of dose rate switching technique, systematic numerical simulations on the MIS (Metal insulator semiconductor) structure was done based on a quantitative physical model and the experimental conditions of dose rate switching technique, regarding hydrogen concentration, initial defect concentrations and temperature as variables. It turned out that the feasibility of the dose rate switching technique is strongly dependent on the hydrogen concentration and initial defects concentrations in the oxide layer of the bipolar devices. Therefore, the experiments of dose rate switching technique have possible failures on part of devices and circuits. (authors)