[en] The development of wires and cables that can tolerate extremely high temperatures will be very important for probing extreme environments, such as in solar exploration, fire disasters, high-temperature materials processing, aeronautics and astronautics. In this paper, a lightweight I high-temperature coaxial h-boron nitride (BN)/carbon nanotube (CNT) wire is synthesized by the chemical vapor deposition (CVD) epitaxial growth of h-BN on CNT yarn. The epitaxially grown h-BN acts as both an insulating material and a jacket that protects against oxidation. It has been shown that the thermionic electron emission (1,200 K) and thermally activated conductivity (1,000 K) are two principal mechanisms I for insulation failure of h-BN at high temperatures. The thermionic emission of h-BN can provide the work function of h-BN, which ranges from 4.22 to 4.61 eV in the temperature range of 1,306-1,787 K. The change in the resistivity of h-BN with temperature follows the ohmic conduction model of an insulator, and it can provide the "electron activation energy" (the energy from the Fermi level to the conduction band of h-BN), which ranges from 2.79 to 3.08 eV, corresponding to a band gap for h-BN ranging from 5.6 to 6.2 eV. However, since the leakage current is very I small, both phenomena have no obvious influence on the signal transmission at the working temperature. This lightweight coaxial h-BN/CNT wire can tolerate 1,200 °C in air and can transmit electrical signals as normal. It is hoped that this lightweight high-temperature wire will open up new possibilities for a wide range of applications in extreme high-temperature conditions. .