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Bagaev, T.A.; Ladugin, M.A.; Padalitsa, A.A.; Marmalyuk, A.A.; Kurnyavko, Yu.V.; Lobintsov, A.V.; Danilov, A.I.; Sapozhnikov, S.M.; Krichevskii, V.V.; Zverkov, M.V.; Konyaev, V.P.; Simakov, V.A.; Slipchenko, S.O.; Podoskin, A.A.; Pikhtin, N.A., E-mail: maximladugin@mail.ru2019
AbstractAbstract
[en] Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same. (lasers)
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Available from http://dx.doi.org/10.1070/QEL17104; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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