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[en] Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent k · p Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 μm lasers at room temperature because they can easily be used to obtain 1.3 μm for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain. (paper)
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