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[en] A novel and facile oxidation-induced self-doping process of graphene-silicon Schottky junction by nitric acid (HNO 3 ) vapor is reported. The HNO 3 oxidation process makes graphene p-type self-doped, and leads to a higher built-in potential and conductivity to enhance charge transfer and to suppress charge carrier recombination at the graphene-silicon Schottky junction. After the HNO 3 oxidation process, the open-circuit voltage is increased from the initial value of 0.36V to the maximum value of 0.47V, the short-circuit current is greatly increased from 0.80 μA to 7.71 μA, and the ideality factor is optimized from 4.4 to 1.0. The enhancement of the performance of graphene-Si solar cells may be due to oxidation-induced p-type self-doping of graphene-Si junctions. (paper)
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