[en] Gallium Nitride nanowires (GaN synthesized on Si(111) substrates using chemical vapour deposition by ammoniating the Ga₂O₃ films. The GaN NWs were characterized by Atomic Force Microscope (AFM), X-ray diffraction (XRD), Raman spectroscopy photoluminescence and X-ray photoelectron spectroscopy (XPS).The AFM images reveal the diameter of GaN is 40-80 nm. The Raman results reveals that observed several vibrational peaks at 465, 500, 569, 609, 622 cm–1 corresponds to zone boundary phonon, acoustic overtone, E2(high), SO (A), SO (E) and A1(LO) respectively shift to higher wavenumber due optical phonon confinement in the GaN NWs. The broad PL spectra GaN observed at 2.82 and 2.96 eV. (author)