[en] Titanium silicon nitride thin films were deposited by thermal chemical vapour deposition using TiO₂+Si₃N₄ powder with different H₂ flow rate. The TiSiN thin films were deposited by SEM, XRD, Raman spectra and nanoindentation characterizations. SEM images of TiSiN thin films reveals roughness decreases with increasing of H₂ flow rate. Raman signatures indicated that intensity the acoustic phonon decreases whereas the optical phonon increasing with optical phonon with increasing of H₂ flow rate. The crystallinity and lattice strain of TiSiN thin films are 2.08 to 4.43 nm and 0.02 to 0.055 respectively for different H₂ flow rate. The maximum hardness, Young modulus, and Yield strength 18.23,185.26 and 83.2 GPa respectively. (author)